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NGB8202N Ignition IGBT
20 A, 400 V, N-Channel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
Features
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* Ideal for Coil-on-Plug and Driver-on-Coil Applications * Gate-Emitter ESD Protection * Temperature Compensated Gate-Collector Voltage Clamp Limits * * * * *
Stress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor (RG) and Gate-Emitter Resistor (RGE)
20 AMPS 400 VOLTS VCE(on) = 1.3 V @ IC = 10 A, VGE . 4.5 V
C
G
RG RGE
Applications
* Ignition Systems
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Collector-Emitter Voltage Collector-Gate Voltage Gate-Emitter Voltage Collector Current-Continuous @ TC = 25C - Pulsed Continuous Gate Current Transient Gate Current (t2 ms, f100 Hz) ESD (Charged-Device Model) ESD (Human Body Model) R = 1500 W, C = 100 pF ESD (Machine Model) R = 0 W, C = 200 pF Total Power Dissipation @ TC = 25C Derate above 25C Operating & Storage Temperature Range Symbol VCES VCER VGE IC IG IG ESD ESD ESD PD TJ, Tstg Value 440 440 "15 20 50 1.0 20 2.0 8.0 500 150 1.0 -55 to +175 Unit V V V ADC AAC mA mA kV kV V Watts W/C C D2PAK CASE 418B STYLE 4
E
MARKING DIAGRAM
NG B8202N YWW
NGB8202N = Device Code Y = Year WW = Work Week
ORDERING INFORMATION
Device NGB8202NT4 Package D2PAK Shipping 800 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
Semiconductor Components Industries, LLC, 2005
January, 2005 - Rev. 1
1
Publication Order Number: NGB8202N/D
NGB8202N
UNCLAMPED COLLECTOR-TO-EMITTER AVALANCHE CHARACTERISTICS (-55 TJ 175C)
Characteristic Single Pulse Collector-to-Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 16.7 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 25C VCC = 50 V, VGE = 5.0 V, Pk IL = 14.9 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 150C VCC = 50 V, VGE = 5.0 V, Pk IL = 14.1 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 175C Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (Note 1) Maximum Temperature for Soldering Purposes, 1/8 from case for 5 seconds (Note 2) 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D. RqJC RqJA TL 1.0 62.5 275 C/W C/W C Symbol EAS Value 250 200 180 2000 Unit mJ
EAS(R)
mJ
ELECTRICAL CHARACTERISTICS
Characteristic OFF CHARACTERISTICS Collector-Emitter Clamp Voltage BVCES ICES IC = 2.0 mA IC = 10 mA Zero Gate Voltage Collector Current VGE = 0 V, VCE = 15 V VCE = 200 V, VGE = 0 V Reverse Collector-Emitter Clamp Voltage BVCES(R) () IC = -75 mA ICES(R) () VCE = -24 V BVGES IGES RG RGE VGE(th) () IG = "5.0 mA VGE = "5.0 V TJ = -40C to 175C TJ = -40C to 175C TJ = 25C TJ = 25C TJ = 175C TJ = -40C TJ = 25C TJ = 175C TJ = -40C Reverse Collector-Emitter Leakage Current TJ = 25C TJ = 175C TJ = -40C Gate-Emitter Clamp Voltage Gate-Emitter Leakage Current Gate Resistor (Optional) Gate-Emitter Resistor ON CHARACTERISTICS (Note 3) Gate Threshold Voltage IC = 1 0 mA 1.0 mA, VGE = VCE TJ = 25C TJ = 175C TJ = -40C Threshold Temperature Coefficient (Negative) *Maximum Value of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. 1.5 0.7 1.7 4.0 1.8 1.0 2.0 4.6 2.1 1.3 2.3* 5.2 mV/C V TJ = -40C to 175C TJ = -40C to 175C TJ = -40C to 175C TJ = -40C to 175C 14.25 0.5 1.0 0.4 30 35 30 0.05 1.0 0.005 12 200 370 390 395 415 0.1 1.5 25 0.8 35 39 33 0.1 5.0 0.01 12.5 300 70 16 25 420 440 1.0 10 100* 5.0 39 45* 37 0.5 10* 0.1 14 350* V mA W kW mA V mA mA V Symbol Test Conditions Temperature Min Typ Max Unit
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NGB8202N
ELECTRICAL CHARACTERISTICS
Characteristic ON CHARACTERISTICS (Note 4) Collector-to-Emitter On-Voltage VCE(on) () IC = 6.5 A, VGE = 3.7 V TJ = 25C TJ = 175C TJ = -40C TJ = 25C IC = 9.0 A, VGE = 3.9 V TJ = 175C TJ = -40C TJ = 25C IC = 7.5 A, VGE = 4.5 V TJ = 175C TJ = -40C TJ = 25C IC = 10 A, VGE = 4.5 V TJ = 175C TJ = -40C TJ = 25C IC = 15 A, VGE = 4.5 V TJ = 175C TJ = -40C TJ = 25C IC = 20 A, VGE = 4.5 V Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS Turn-Off Delay Time (Resistive) td(off) () tf td(off) () tf td(on) () tr VCC = 14 V, IC = 9.0 A RG = 1 0 kW RL = 1 5 W 1.0 kW, 1.5 W, VGE = 5.0 V VCC = 300 V, IC = 9.0 A RG = 1 0 kW 1.0 kW, L = 300 m , VGE = 5.0 V mH, VCC = 300 V, IC = 9.0 A RG = 1 0 kW RL = 33 W 1.0 kW, W, VGE = 5.0 V TJ = 25C TJ = 175C TJ = 25C TJ = 175C Turn-Off Delay Time (Inductive) TJ = 25C TJ = 175C TJ = 25C TJ = 175C Turn-On Delay Time TJ = 25C TJ = 175C TJ = 25C TJ = 175C *Maximum Value of Characteristic across Temperature Range. 4. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. 6.0 6.0 4.0 8.0 3.0 5.0 1.5 5.0 1.0 1.0 4.0 3.0 8.0 8.0 6.0 10.5 5.0 7.0 3.0 7.0 1.5 1.5 6.0 5.0 10 10 8.0 14 7.0 9.0 4.5 10 2.0 2.0 8.0 7.0 mSec CISS COSS CRSS f = 10 kHz, VCE = 25 V TJ = 25C 1100 70 18 1300 80 20 1500 90 22 pF gfs IC = 6.0 A, VCE = 5.0 V TJ = 175C TJ = -40C TJ = 25C 0.95 0.7 1.0 0.95 0.8 1.1 0.85 0.7 1.0 1.0 0.8 1.1 1.15 1.0 1.25 1.3 1.2 1.4 10 1.15 0.95 1.3 1.25 1.05 1.4 1.15 0.95 1.3 1.3 1.05 1.4 1.45 1.3 1.55 1.6 1.5 1.75 18 1.35 1.15 1.40 1.45 1.25 1.5 1.4 1.2 1.6* 1.6 1.4 1.7* 1.7 1.55 1.8* 1.9 1.8 2.0* 25 Mhos V Symbol Test Conditions Temperature Min Typ Max Unit
Fall Time (Resistive)
Fall Time (Inductive)
Rise Time
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NGB8202N
TYPICAL ELECTRICAL CHARACTERISTICS
400 IA, AVALANCHE CURRENT (A) 350 SCIS ENERGY (mJ) 300 250 200 150 100 50 0 0 2 4 6 VCC = 14 V VGE = 5.0 V RG = 1000 W 8 10 INDUCTOR (mH) TJ = 175C TJ = 25C 30 25 20 15 10 5 0 -50 L = 1.8 mH L = 3.0 mH VCC = 14 V VGE = 5.0 V RG = 1000 W
L = 10 mH
-25
0
25
50
75
100
125
150 175
TJ, JUNCTION TEMPERATURE (C)
Figure 1. Self Clamped Inductive Switching
VCE, COLLECTOR TO EMITTER VOLTAGE (V) 2.0 IC, COLLECTOR CURRENT (A) 1.75 1.5 1.25 1.0 0.75 0.5 0.25 0.0 -50 VGE = 4.5 V -25 0 25 50 75 100 125 150 175 IC = 25 A IC = 20 A IC = 15 A IC = 10 A IC = 7.5 A 60 50 40 30 20 10 0
Figure 2. Open Secondary Avalanche Current vs. Temperature
VGE = 10 V 5V TJ = 175C 3.5 V 3V 2.5 V 4.5 V 4V
0
1
2
3
4
5
6
7
8
TJ, JUNCTION TEMPERATURE (C)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 3. Collector-to-Emitter Voltage vs. Junction Temperature
60 IC, COLLECTOR CURRENT (A) 50 40 TJ = 25C 30 20 10 0 3V 3.5 V IC, COLLECTOR CURRENT (A) VGE = 10 V 5V 4.5 V 4V 60
Figure 4. Collector Current vs. Collector-to-Emitter Voltage
VGE = 10 V 50 5V 40 TJ = -40C 30 20
4.5 V
4V
3.5 V
3V 10 0 2.5 V 0 1 2 3 4 5 6 7 8
2.5 V 0 1 2 3 4 5 6 7 8
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector Current vs. Collector-to-Emitter Voltage
Figure 6. Collector Current vs. Collector-to-Emitter Voltage
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NGB8202N
TYPICAL ELECTRICAL CHARACTERISTICS
VCE = 5 V COLLECTOR TO EMITTER LEAKAGE CURRENT (mA) 45 IC, COLLECTOR CURRENT (A) 40 35 30 25 20 15 10 5 0 0 0.5 1 TJ = 175C 1.5 2 2.5 TJ = -40C 3 3.5 4 TJ = 25C 10000 1000 100 10 VCE = 200 V 1.0 0.1 -50
VCE = -24 V
-25
0
25
50
75
100
125
150 175
VGE, GATE TO EMITTER VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (C)
Figure 7. Transfer Characteristics
Figure 8. Collector-to-Emitter Leakage Current vs. Temperature
10000
2.50 GATE THRESHOLD VOLTAGE (V) 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0 -50 -25 0 25 50 75 100 125 150 175 Mean + 4 s Mean - 4 s Mean
C, CAPACITANCE (pF)
1000 100 10 1.0 0.1
Ciss Coss Crss
0
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (C)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 9. Gate Threshold Voltage vs. Temperature
12 10 SWITCHING TIME (ms) 8 6 4 2 0 25 VCC = 300 V VGE = 5.0 V RG = 1000 W IC = 9.0 A RL = 33 W 50 75 100 125 150 175 12 10 SWITCHING TIME (ms) 8 6 4 2 0 25
Figure 10. Capacitance vs. Collector-to-Emitter Voltage
tfall tdelay
VCC = 300 V VGE = 5.0 V RG = 1000 W IC = 9.0 A L = 300 mH
tdelay tfall
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (C)
TJ, JUNCTION TEMPERATURE (C)
Figure 11. Resistive Switching Fall Time vs. Temperature http://onsemi.com
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Figure 12. Inductive Switching Fall Time vs. Temperature
NGB8202N
R(t), TRANSIENT THERMAL RESISTANCE (C/Watt) 100 Duty Cycle = 0.5 0.2 10 0.1 0.05 1 0.02 0.01 0.1 Single Pulse 0.01 0.000001 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.00001 0.0001 0.001 0.01 t,TIME (S) 0.1 1 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TA = P(pk) RqJA(t) For D=1: RqJC X R(t) for t 0.1 s 10 100 1000
Figure 13. Minimum Pad Transient Thermal Resistance (Non-normalized Junction-to-Ambient)
RqJC(t), TRANSIENT THERMAL RESISTANCE (C/Watt)
1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.000001 P(pk) t1 t2 Single Pulse 0.00001 0.0001 DUTY CYCLE, D = t1/t2 0.001 t,TIME (S) 0.01 0.1 1 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TA = P(pk) RqJC(t)
Figure 14. Best Case Transient Thermal Resistance (Non-normalized Junction-to-Case Mounted on Cold Plate)
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NGB8202N
PACKAGE DIMENSIONS
D2PAK 3 CASE 418B-04 ISSUE J
C E -B-
4
V W
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. DIM A B C D E F G H J K L M N P R S V INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40
1
2
3
S
A
-T-
SEATING PLANE
K G D 3 PL 0.13 (0.005) H
M
J
W
TB
M
VARIABLE CONFIGURATION ZONE L M
R
N U L
P
STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR
L M
M
F VIEW W-W 1
F VIEW W-W 2
F VIEW W-W 3
SOLDERING FOOTPRINT
8.38 0.33
10.66 0.42
1.016 0.04
5.08 0.20
17.02 0.67
3.05 0.12
mm inches
SCALE 3:1
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NGB8202N
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NGB8202N/D

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